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Τι (ποιος) είναι FETs - ορισμός
Llibre dels fets
![crusade of 1269]]](https://commons.wikimedia.org/wiki/Special:FilePath/BNE 10121, p. 192.jpg?width=200 "crusade of 1269]]")
![1313 Latin translation of the ''Llibre dels Fets'', the ''Cronice Illustrissimi Regis Aragonum'' by Friar [[Pere Marsili]] following the order of James II of Aragon (grandson of James I of Aragon).](https://commons.wikimedia.org/wiki/Special:FilePath/Cronice Illustrissimi Regis Aragonum-f6r.jpg?width=200 "1313 Latin translation of the ''Llibre dels Fets'', the ''Cronice Illustrissimi Regis Aragonum'' by Friar [[Pere Marsili]] following the order of James II of Aragon (grandson of James I of Aragon).")
![Dominican friar]] [[Pere Marsili]], by order of James II of Aragon, grandson of [[James I of Aragon]], called "the Conqueror".](https://commons.wikimedia.org/wiki/Special:FilePath/Cronice Illustrissimi Regis Aragonum-f6v.jpg?width=200 "Dominican friar]] [[Pere Marsili]], by order of James II of Aragon, grandson of [[James I of Aragon]], called \"the Conqueror\".")
BOOK
Libre dels feyts; Crònica de Jaume I
The (; from Catalan: "Book of Deeds"; Old Catalan: ) is the autobiographical chronicle of the reign of James I of Aragon (1213–1276). It is written in Old Catalan in the first person and is the first chronologically of the four works classified as The Four Great Catalan Chronicles, all belonging to the early medieval Crown of Aragon (in the northeastern part of what is now Spain), and its first royal dynasty, the House of Barcelona.
Fet
![[[Julius Edgar Lilienfeld]] proposed the concept of a field-effect transistor in 1925.](https://commons.wikimedia.org/wiki/Special:FilePath/Julius Edgar Lilienfeld (1881-1963).jpg?width=200 "[[Julius Edgar Lilienfeld]] proposed the concept of a field-effect transistor in 1925.")
![Simulation result for right side: formation of inversion channel (electron density) and left side: current-gate voltage curve (transfer characteristics) in an n-channel [[nanowire]] [[MOSFET]]. Note that the [[threshold voltage]] for this device lies around 0.45 V.](https://commons.wikimedia.org/wiki/Special:FilePath/Threshold formation nowatermark.gif?width=200 "Simulation result for right side: formation of inversion channel (electron density) and left side: current-gate voltage curve (transfer characteristics) in an n-channel [[nanowire]] [[MOSFET]]. Note that the [[threshold voltage]] for this device lies around 0.45 V.")
TRANSISTOR THAT USES AN ELECTRIC FIELD TO CONTROL ITS ELECTRICAL BEHAVIOUR
Field-effect transistors; Field-Effect Transistor; Field Effect Transistor; Depletion mode transistor; Depletion-mode transistor; FREDFET; Gate (transistor); Field effect transistor; Field effect transistors; Unipolar transistor; Unipolar transistors; Transistor channel; Channel (transistors); Drain (transistor); Source (transistor); Substrate (transistor); Bulk (transistor); FET (transistor); Body (transistor); Channel (transistor); FET; Depletion Mode Transistor; Fast-reverse epitaxial diode field-effect transistor; Fast-recovery epitaxial diode field-effect transistor; Channel (semiconductor); Gate electrode; P-channel; N-channel; Gate (FET); Drain (FET); Source (FET)
FET
TRANSISTOR THAT USES AN ELECTRIC FIELD TO CONTROL ITS ELECTRICAL BEHAVIOUR
Field-effect transistors; Field-Effect Transistor; Field Effect Transistor; Depletion mode transistor; Depletion-mode transistor; FREDFET; Gate (transistor); Field effect transistor; Field effect transistors; Unipolar transistor; Unipolar transistors; Transistor channel; Channel (transistors); Drain (transistor); Source (transistor); Substrate (transistor); Bulk (transistor); FET (transistor); Body (transistor); Channel (transistor); FET; Depletion Mode Transistor; Fast-reverse epitaxial diode field-effect transistor; Fast-recovery epitaxial diode field-effect transistor; Channel (semiconductor); Gate electrode; P-channel; N-channel; Gate (FET); Drain (FET); Source (FET)
